| Nonuniform total-dose-induced charge distribution in shallow-trench isolation oxides M Turowski, A Raman, RD Schrimpf IEEE transactions on nuclear science 51 (6), 3166-3171, 2004 | 150 | 2004 |
| Finite-time stabilization of fractional order uncertain chain of integrator: an integral sliding mode approach S Kamal, A Raman, B Bandyopadhyay IEEE Transactions on Automatic Control 58 (6), 1597-1602, 2012 | 80 | 2012 |
| Fast, automated thermal simulation of three-dimensional integrated circuits P Wilkerson, A Raman, M Turowski The Ninth Intersociety Conference on Thermal and Thermomechanical Phenomena …, 2004 | 73 | 2004 |
| Simulation of nonequilibrium thermal effects in power LDMOS transistors A Raman, DG Walker, TS Fisher Solid-State Electronics 47 (8), 1265-1273, 2003 | 71 | 2003 |
| An evaluation of transistor-layout RHBD techniques for SEE mitigation in SiGe HBTs AK Sutton, M Bellini, JD Cressler, JA Pellish, RA Reed, PW Marshall, ... IEEE Transactions on Nuclear Science 54 (6), 2044-2052, 2007 | 61 | 2007 |
| Mixed-mode simulation and analysis of digital single event transients in fast CMOS ICs M Turowski, A Raman, G Jablonski Mixed Design of Integrated Circuits and Systems, 2007. MIXDES'07. 14th …, 2007 | 51 | 2007 |
| Heavy ion microbeam-and broadbeam-induced transients in SiGe HBTs JA Pellish, RA Reed, D McMorrow, G Vizkelethy, VF Cavrois, J Baggio, ... IEEE Transactions on Nuclear Science 56 (6), 3078-3084, 2009 | 41 | 2009 |
| Single event transient response of SiGe voltage references and its impact on the performance of analog and mixed-signal circuits L Najafizadeh, SD Phillips, KA Moen, RM Diestelhorst, M Bellini, PK Saha, ... IEEE Transactions on Nuclear Science 56 (6), 3469-3476, 2009 | 31 | 2009 |
| Temperature-dependence of off-state drain leakage in X-ray irradiated 130 nm CMOS devices B Jun, RM Diestelhorst, M Bellini, G Espinel, A Appaswamy, APG Prakash, ... IEEE transactions on nuclear science 53 (6), 3203-3209, 2006 | 28 | 2006 |
| Single-event burnout of SiC junction barrier Schottky diode high-voltage power devices AF Witulski, R Arslanbekov, A Raman, RD Schrimpf, AL Sternberg, ... IEEE Transactions on Nuclear Science 65 (1), 256-261, 2017 | 23 | 2017 |
| Reconciling 3-D mixed-mode simulations and measured single-event transients in SiGe HBTs M Turowski, JA Pellish, KA Moen, A Raman, JD Cressler, RA Reed, G Niu IEEE Transactions on Nuclear Science 57 (6), 3342-3348, 2010 | 23 | 2010 |
| An investigation of single-event effects and potential SEU mitigation strategies in fourth-generation, 90 nm SiGe BiCMOS NE Lourenco, SD Phillips, TD England, AS Cardoso, ZE Fleetwood, ... IEEE Transactions on Nuclear Science 60 (6), 4175-4183, 2013 | 20 | 2013 |
| Simulating the radiation response of GaAs solar cells using a defect-based TCAD model M Turowski, T Bald, A Raman, A Fedoseyev, JH Warner, CD Cress, ... IEEE Transactions on Nuclear Science 60 (4), 2477-2485, 2013 | 17 | 2013 |
| Accurate modeling of single-event transients in a SiGe voltage reference circuit KA Moen, L Najafizadeh, J Seungwoo, A Raman, M Turowski, ... IEEE Transactions on Nuclear Science 58 (3), 877-884, 2011 | 17 | 2011 |
| The impact of technology scaling on the single-event transient response of SiGe HBTs NE Lourenco, ZE Fleetwood, A Ildefonso, MT Wachter, NJH Roche, ... IEEE Transactions on Nuclear Science 64 (1), 406-414, 2016 | 16 | 2016 |
| Digital single event transient pulse generation and propagation in fast bulk CMOS ICs M Turowski, D Mavis, A Raman, P Eaton 2006 IEEE Nuclear and Space Radiation Effects Conference (NSREC), 2006 | 16 | 2006 |
| Addressing challenges in device-circuit modeling for extreme environments of space A Raman, M Turowski, A Fedoseyev, JD Cressler Semiconductor Device Research Symposium, 2007 International, 2007 | 15 | 2007 |
| Single event upset modeling with nuclear reactions in nanoscale electronics M Turowski, A Fedoseyev, A Raman, K Warren 2008 15th International Conference on Mixed Design of Integrated Circuits …, 2008 | 14 | 2008 |
| Enabling mixed-mode analysis of nano-scale SiGe BiCMOS technologies in extreme environments M Turowski, A Raman, A Fedoseyev 2009 European Conference on Radiation and Its Effects on Components and …, 2009 | 13 | 2009 |
| Layout based full chip thermal simulations of stacked 3D integrated circuits A Raman, M Turowski, M Mar Int. Mechanical Engineering Congress and Exposition, IMECE-2003, 2003 | 13 | 2003 |
Marek TurowskiAlphacore Inc., USAVerified email at ieee.org
