Wafer‐fused 1300 nm VCSELs with an active region based on superlattice S Blokhin, A Babichev, A Gladyshev, L Karachinsky, I Novikov, A Blokhin, ...
Electronics Letters 57 (18), 697-698, 2021
21 2021 Optical gain in laser heterostructures with an active area based on an InGaAs/InGaAlAs superlattice LY Karachinsky, II Novikov, AV Babichev, AG Gladyshev, ES Kolodeznyi, ...
Optics and Spectroscopy 127, 1053-1056, 2019
18 2019 A Vertical-Cavity Surface-Emitting Laser for the 1.55-μm Spectral Range with Tunnel Junction Based on n ++ -InGaAs/p ++ -InGaAs/p ++ -InAlGaAs Layers SA Blokhin, MA Bobrov, NA Maleev, AA Blokhin, AG Kuz’menkov, ...
Technical Physics Letters 46, 854-858, 2020
16 2020 The effect of a saturable absorber in long-wavelength vertical-cavity surface-emitting lasers fabricated by wafer fusion technology SA Blokhin, MA Bobrov, AA Blokhin, AP Vasil’ev, AG Kuz’menkov, ...
Technical Physics Letters 46, 1257-1262, 2020
13 2020 1. 55-μm-Range Vertical-Cavity Surface-Emitting Lasers, Manufactured by Wafer Fusion of Heterostructures Grown by Solid-Source Molecular-Beam Epitaxy SA Blokhin, SN Nevedomsky, MA Bobrov, NA Maleev, AA Blokhin, ...
Semiconductors 54, 1276-1283, 2020
12 2020 Analysis of the internal optical losses of the vertical-cavity surface-emitting laser of the spectral range of 1.55 µm formed by a plate sintering technique SA Blokhin, MA Bobrov, AA Blokhin, AG Kuzmenkov, NA Maleev, ...
Optics and Spectroscopy 127, 140-144, 2019
11 2019 Optical gain of 1550-nm range multiple-quantum-well heterostructures and limiting modulation frequencies of vertical-cavity surface-emitting lasers based on them ES Kolodeznyi, SS Rochas, AS Kurochkin, AV Babichev, II Novikov, ...
Optics and Spectroscopy 125, 238-242, 2018
11 2018 Influence of output optical losses on the dynamic characteristics of 1.55-μm wafer-fused vertical-cavity surface-emitting lasers SA Blokhin, MA Bobrov, AA Blokhin, AG Kuzmenkov, NA Maleev, ...
Semiconductors 53, 1104-1109, 2019
10 2019 Critical conditions of dislocation generation in core-shell nanowires: a review AM Smirnov, SA Krasnitckii, SS Rochas, MY Gutkin
Rev. Adv. Mater. Technol 2, 19-43, 2020
9 2020 Impact of transverse optical confinment on performance of 1.55 SA Blokhin, MA Bobrov, AA Blokhin, NA Maleev, AG Kuz'menkov, ...
Pisma v Zhurnal Tekhnicheskoi Fiziki 47 (22), 3-8, 2021
6 2021 STUDY OF ANTIREFLECTION COATINGS FOR ES Kolodeznyi, II Novikov, AG Gladyshev, SS Rochas, KD Sharipo, ...
Materials Physics and Mechanics 32, 194-197, 2017
6 2017 1300-nm wafer-fused VCSELs with InGaAs/InAlGaAs superlattice-based active region SA Blokhin, N Ledentsov Jr, SS Rochas, AV Babichev, AG Gladyshev, ...
Vertical-Cavity Surface-Emitting Lasers XXVI 12020, 132-140, 2022
4 2022 On the impact of barrier-layer doping on the photoluminescence efficiency of InGaAlAs/InGaAs/InP strained-layer heterostructures ES Kolodeznyi, AS Kurochkin, SS Rochas, AV Babichev, II Novikov, ...
Semiconductors 52, 1156-1159, 2018
4 2018 Оптическое усиление гетероструктур с множественными квантовыми ямами в диапазоне длин волн 1550 nm и предельные частоты модуляции вертикально-излучающих лазеров на их основе ЕС Колодезный, СС Рочас, АС Курочкин, АВ Бабичев, ИИ Новиков, ...
Оптика и спектроскопия 125 (2), 229-233, 2018
4 2018 The influence of the parameters of a short-period InGaAs/InGaAlAs superlattice on photoluminescence efficiency SS Rochas, II Novikov, AG Gladyshev, ES Kolodeznyi, AV Babichev, ...
Technical Physics Letters 46, 1128-1131, 2020
3 2020 Wafer fusion technique features for near-IR laser sources SS Rochas, II Novikov, LY Karachinsky, AV Babichev, SA Blokhin, ...
Journal of Physics: Conference Series 2103 (1), 012107, 2021
2 2021 Influence of the doping type on the temperature dependencies of the photoluminescence efficiency of InGaAlAs/InGaAs/InP heterostructures II Novikov, AM Nadtochiy, AY Potapov, AG Gladyshev, ES Kolodeznyi, ...
Journal of Luminescence 239, 118393, 2021
2 2021 Investigation of properties of InGaAs/InAlGaAs superlattice for vertical-cavity surface-emitting lasers in the spectral range of 1300 nm SA Blokhin, AV Babichev, AG Gladyshev, LY Karachinsky, II Novikov, ...
Zh. Tekh. Fiz 91 (12), 2008-2017, 2021
2 2021 A heterostructure for resonant-cavity GaAs pin photodiode with 840-860 nm wavelength SS Rochas, ES Kolodeznyi, OA Kozyreva, KO Voropaev, DP Sudas, ...
Journal of Physics: Conference Series 1236 (1), 012071, 2019
2 2019 Ring-shaped contamination detection system Y Kovach, A Petrenko, S Rochas, D Shiryaev, A Borodkin, E Kolodeznyi
International Youth Conference on Electronics, Telecommunications and …, 2022
1 2022 
Innokenty NovikovConnector Optics LLC, ITMO University, Ioffe Physical-Technical Instituteبريد إلكتروني تم التحقق منه على switch.ioffe.ru
